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| BCF 32, BFC 33 NPN General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 2.9 0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehause 1.3 0.1 Type Code 1 2 2.5 max Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Mae in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (DC) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM IBM Tj TS Grenzwerte (TA = 25/C) BCF 32, BCF 33 32 V 32 V 5V 250 mW 1) 100 mA 200 mA 100 mA 150/C - 65...+ 150/C Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 32 V IE = 0, VCB = 32 V, Tj = 100/C Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 5 V IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA IEB0 2 Kennwerte (Tj = 25/C) Typ. - - - 120 mV 210 mV Max. 100 nA 10 :A 100 nA 250 mV - ICB0 ICB0 - - - - - Collector saturation volt. - Kollektor-Sattigungsspg. ) VCEsat VCEsat 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 20 01.11.2003 General Purpose Transistors Characteristics (Tj = 25/C) Min. Base saturation voltage - Basis-Sattigungsspannung 1) IC = 10 mA, IB = 0.5 mA IC = 50 mA, IB = 2.5 mA BCF 32 BCF 33 BCF 32 BCF 33 VBEsat VBEsat hFE hFE hFE hFE VBEon fT CCB0 - - - - 200 420 550 mV 100 MHz - BCF 32, BCF 33 Kennwerte (Tj = 25/C) Typ. 750 mV 850 mV 150 270 - - - - 2.5 pF Max. - - - - 450 800 700 mV - - DC current gain - Kollektor-Basis-Stromverhaltnis 1) VCE = 5 V, IC = 10 :A VCE = 5 V, IC = 2 mA Base-Emitter voltage - Basis-Emitter-Spannung 1) VCE = 5 V, IC = 2 mA Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz VCB = 10 V, IE = ie = 0, f = 1 MHz Noise figure - Rauschzahl VCE = 5 V, IC = 200 :A, RG = 2 kS, f = 1 kHz, )f = 200 Hz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking - Stempelung BCF 32 = D7 F - RthA 1.2 dB 4 dB 420 K/W 2) BCF 29, BCF 30 BCF 33 = D8 Collector-Base Capacitance - Kollektor-Basis-Kapazitat ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 21 |
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